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| BFR92AW NPN 5 GHz wideband transistor Rev. 03 -- 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES * High power gain * Gold metallization ensures excellent reliability * SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns BFR92AW 3 1 Top view Marking code: P2. 2 MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 93 C; note 1 IC = 15 mA; VCE = 10 V IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 C IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt open base CONDITIONS open emitter - - - - 65 - 3.5 - - - - MIN. - - - - 90 0.35 5 14 8 2 - TYP. MAX. 20 15 25 300 135 - - - - - 150 pF GHz dB dB dB C UNIT V V mA mW Rev. 03 - 12 March 2008 2 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 93 C; see Fig.2; note 1 open base open collector CONDITIONS open emitter MIN. - - - - - -65 - BFR92AW MAX. 20 15 2 25 300 +150 150 UNIT V V V mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 93 C; note 1 VALUE 190 UNIT K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 400 P tot (mW) 300 MLB540 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve Rev. 03 - 12 March 2008 3 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 10 V IC = 15 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt IC = 5 mA; VCE = 10 V; f = 2 GHz; s = opt Note - 65 - - - - - - - MIN. - 90 0.6 0.9 0.35 5 14 8 2 3 TYP. BFR92AW MAX. 50 135 - - - - - - - - UNIT nA pF pF pF GHz dB dB dB dB IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) Rev. 03 - 12 March 2008 4 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, halfpage 120 MCD074 1.0 C re (pF) 0.8 MGC883 h FE 80 0.6 0.4 40 0.2 0 0 10 20 I C (mA) 30 0 0 4 8 12 16 20 VCB (V) VCE = 10 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 6 MGC884 f T (GHz) 4 2 0 1 10 I C (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 03 - 12 March 2008 5 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, halfpage 30 MGC885 handbook, halfpage 30 MGC886 gain (dB) 20 MSG GUM gain (dB) 20 MSG GUM 10 10 0 0 5 10 15 I C (mA) 20 0 0 5 10 15 I C (mA) 20 VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MGC887 gain (dB) handbook, halfpage 50 MGC888 gain (dB) GUM 40 GUM 40 MSG 30 MSG 30 20 20 10 Gmax 0 10 10 2 10 Gmax 0 10 3 f (MHz) 10 4 10 10 2 10 3 f (MHz) 10 4 VCE = 10 V; IC = 5 mA. VCE = 10 V; IC = 15 mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 03 - 12 March 2008 6 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, halfpage 6 MGC889 handbook, halfpage 6 MGC890 F (dB) 4 f = 2 GHz F (dB) 4 IC = 15 mA 1 GHz 500 MHz 2 2 10 mA 5 mA 0 1 10 I C (mA) 10 2 0 102 103 f (MHz) 104 VCE = 10 V. VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 90 o handbook, full pagewidth 1.0 1 135 o F = 4 dB 0.5 F = 3 dB 2 45 o 0.8 0.6 F = 2 dB 0.2 F min = 1.6 dB opt 2 5 5 0.4 0.2 0o 0 180 o 0 0.2 0.5 1 0.2 5 0.5 135 o 1 2 45 o MGC891 1.0 90 o f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 . Fig.12 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 7 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 (4) (2) (3) 0.2 (5) (6) 0.2 (7) 0.2 (8) 5 0.5 1 5 (1) 2 5 0o 45 o 0.8 0.6 0.4 0.2 0 180 o 0 (1) (2) (3) (4) (5) opt; Fmin = 2.1 dB. F = 2.5 dB. F = 3 dB. F = 4 dB. ms; Gmax = 15.7 dB. 0.5 135 o 1 2 45 o MGC892 (6) G = 15 dB. (7) G = 14 dB. (8) G = 13 dB. f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 . 1.0 90 o Fig.13 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 (4) (3) 0.2 (2) 5 0.4 0.2 (1) 180 o 0 0.2 (5) 0.5 1 2 5 0o 0 2 45 o 0.8 0.6 0.2 (1) opt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) ms; Gmax = 9.1 dB. (6) G = 8 dB. (7) G = 7 dB. (8) G = 6 dB. f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 . (6) (7) (8) 0.5 2 1 5 135 o 45 o MGC893 1.0 90 o Fig.14 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 8 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 1 2 5 0o 0 0.2 3 GHz 180 o 0.2 0.5 5 0 40 MHz 0.2 5 0.5 135 o 1 2 45 o MGC894 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 50 40 30 20 10 3 GHz 0o 135 o 45 o 90 o VCE = 10 V; IC = 15 mA. MGC895 Fig.16 Common emitter forward transmission coefficient (s21); typical values. Rev. 03 - 12 March 2008 9 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, full pagewidth 90 o 3 GHz 135 o 45 o 180 o 0.25 40 MHz 0.20 0.15 0.10 0.05 0o 135 o 45 o 90 o VCE = 10 V; IC = 15 mA. MGC896 Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 3 GHz 0o 0 0.2 5 0.2 5 0.5 135 o 1 2 45 o MGC897 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.18 Common emitter output reflection coefficient (s22); typical values. Rev. 03 - 12 March 2008 10 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE BFR92AW handbook, full pagewidth 2.2 1.8 A 1.35 1.15 B X 0.25 0.10 2.2 2.0 0.2 M B 3 0.2 1.0 0.8 0.1 0.0 1.1 max 1 0.65 0.40 0.30 2 0.2 M A detail X 0.3 0.1 MBC871 1.3 Dimensions in mm. Fig.19 SOT323. Rev. 03 - 12 March 2008 11 of 13 NXP Semiconductors BFR92AW NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Rev. 03 - 12 March 2008 12 of 13 NXP Semiconductors BFR92AW NPN 5 GHz wideband transistor Revision history Revision history Document ID BFR92AW_N_3 Modifications: BFR92AW_2 BFR92AW_1 Release date 20080312 Data sheet status Product data sheet Product specification Change notice Supersedes BFR92AW_2 BFR92AW_1 - * Quick reference data and Characteristics Table; DC current gain value changed 19950918 19921001 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 March 2008 Document identifier: BFR92AW_N_3 |
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